G3R40MT12D 1200V 55A SiC MOSFET – TO-247-3 High-Power Switching Device 1pc

The G3R40MT12D Silicon Carbide (SiC) MOSFET is a high-performance 1200V, 55A power switching device designed for demanding high-voltage and high-frequency power electronics applications. Housed in a robust TO-247-3 package, this MOSFET delivers fast switching speed, low conduction losses, and excellent thermal stability.

Key Features

• Drain-Source Voltage: 1200V
• Continuous Drain Current: 55A
• Technology: Silicon Carbide (SiC)
• Package: TO-247-3
• Low R_DS(on) for high efficiency
• Fast switching for high-frequency operation
• High temperature capability and thermal reliability

Typical Applications

• High-voltage DC-AC and DC-DC power inverters
• SSTC and DRSSTC Tesla coil drivers
• Resonant and soft-switching converters
• Induction heating systems
• SMPS and high-frequency power supplies

The G3R40MT12D SiC MOSFET is ideal for designers and builders seeking high-efficiency, fast-switching semiconductor devices capable of operating at elevated voltages and frequencies where traditional silicon MOSFETs fall short.

Sold as 1 piece. Suitable for professional, industrial, and advanced experimental power electronics applications.